【シリコントランジスタ】
MOSFET
Nチャンネル 100V 9.2AMP
金属プレートを下に（端子を手前に）
左より G D S
Manufacturer: Vishay
Product Category: MOSFET
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 100 V
Gate-Source Breakdown Voltage: +/- 20 V
Continuous Drain Current: 9.2 A
Resistance Drain-Source RDS (on): 0.27 Ohms
Configuration: Single
Maximum Operating Temperature: + 175 C
Mounting Style: Through Hole
Package / Case: TO-220AB
Fall Time: 20 ns
Minimum Operating Temperature: - 55 C
Power Dissipation: 60 W
Rise Time:30 ns
Typical Turn-Off Delay Time: 19 ns
Power MOSFET IRF520, SiHF520 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
